| PART |
Description |
Maker |
| MB85415 |
16384 Words x 36-Bit
|
Fujitsu
|
| UPD2716 |
16384 Bit UV Erasable PROM
|
NEC
|
| HYB4116-2 HYB4116-3 |
(HYB4116-2/-3) 16384-Bit DRAM
|
Infineon Technologies
|
| HM6288P-35 |
16384-word x 4-Bit High Speed CMOS Static RAM
|
Hitachi Semiconductor
|
| HM6267LP-35 HM6267LP-45 HM6267LP-55 HM6267P-35 HM6 |
16384-word x 1-bit High Speed CMOS Static RAM
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| M5M4416P M5M4416P-12 M5M4416P-15 |
65536 Bit (16384 Word by 4 Bit) Dynamic Ram
65,536-BIT (16,384-WORD BY 4-BIT) DYNAMIC RAM
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| M5M5V5636UG-16 M5M5V5636GP-16I |
Memory>Fast SRAM>Network SRAM
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
Renesas
|
| AM9112APC AM9112ADC |
SRAM,256X4,MOS,DIP,16PIN,PLASTIC
SRAM,256X4,MOS,DIP,16PIN,CERAMIC
From old datasheet system
|
AMD Inc
|
| HM62W8511HCLJP-12 HM62W8511HC HM62W8511HCJP-10 HM6 |
Memory>Fast SRAM>Asynchronous SRAM
4M High Speed SRAM (512-kword x 8-bit)
BOX 5.0X1.85X1.0 W/CLP BLK
|
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
| UPD444001 UPD444001LE-11 UPD444001LE-10 UPD444001L |
4M X 1 STANDARD SRAM, 11 ns, PDSO32
4M-BIT CMOS FAST SRAM 4M-WORD BY 1-BIT 4分位CMOS SRAM的快速分1
|
NEC Corp.
NEC, Corp.
|
